Memotech offers an extensive range of high quality memory components including SRAM, DRAM and FLASH.
STORAGE - Solid-State Drives (SSD's) are based on Nand Flash technology. They have no moving parts and can operate
reliably in robust conditions. They are scalable across multiple form factors and require less than one-tenth the power of
mechanical storage.
- STORAGE - COMPACT FLASH CARDS
- STORAGE - 2.5'' DRIVES
- STORAGE - 1.8'' DRIVES
- STORAGE - BLADE
- STORAGE - 10-PIN MODULE
- STORAGE - PC CARD
SRAM - Static Random Access Memory. SRAM chips do not need to be refreshed like DRAM chips. This makes SRAM chips faster and more realiable, however
because of it's structure they have larger cells so are more expensive compared to other memory types.
- SRAM - 3V ASYNCHRONOUS
- SRAM - 5V ASYNCHRONOUS
- SRAM - 3V SYNCHRONOUS
- SRAM - 3V PSEUDO
- SRAM - 1.8V PSEUDO
- SRAM - 1.8V DDR-II
- SRAM - 1.8V QUAD
DRAM - Dynamic Random Access Memory. DRAM is a type of RAM that maintains its content only as long as the data stored in the device is refreshed at
regular intervals. DRAM requires a refresh cycle every few milliseconds in order to retain its data. The data is stored in a capacitor which slowly leaks, the refresh
cycle re-charges the capacitor. DRAM is cheaper SRAM but DRAM is slower because of the longer access times.
- DRAM - 3V FPM / EDO
- DRAM - 5V FPM / EDO
- DRAM - 3V SYNCHRONOUS
- DRAM - 2.5V DDR
- DRAM - 1.8V DDR2
- DRAM - 1.8V DDR3
DRAM Module - DRAM modules are a collection of DRAM chips assembled on a circuit board.
- DRAM MODULE - 3V EDO
- DRAM MODULE - 3V SYNCHRONOUS UNBUFFERED
- DRAM MODULE - 3V SYNCHRONOUS REGISTERED
- DRAM MODULE - 3V SYNCHRONOUS SODIMM
- DRAM MODULE - 2.5V DDR UNBUFFERED
- DRAM MODULE - 2.5V DDR REGISTERED
- DRAM MODULE - 2.5V DDR SODIMM
- DRAM MODULE - 1.8V DDR2 UNBUFFERED
- DRAM MODULE - 1.8V DDR2 FULLY BUFFERED
- DRAM MODULE - 1.8V DDR2 REGISTERED
- DRAM MODULE - 1.8V DDR2 SODIMM
- DRAM MODULE - 1.8V DDR2 VLP RDIMM
FLASH - Flash memory is a nonvolatile memory using either NOR or NAND technology. Flash memory does not require power to retain it's value. Flash
memory may be electrically programmed and erased. Current technologies allow NAND Flash memory's to be more dense then NOR Flash devices, making it ideal for large data
storage files.
- NOR FLASH - 3V
- NOR FLASH - 3V DUAL BANK
- SERIAL FLASH - 3V
- NOR FLASH - 5V
- NAND FLASH - 3V
EEPROM - Electrically Erasable Programmable Read Only Memory is the same as an EPROM except that an EEPROM may be erased via an electric field,
hence the term Electrically Erasable. Because these devices are erased via a voltage and not light they do not require a window like EPROMs do.
- EEPROM - 1.8V ~ 5.5V MICROWIRE SERIAL
- EEPROM - 1.8V ~ 5.5V TWO-WIRE SERIAL
- EEPROM - 1.8V ~ 5.5V SERIAL PERIPHERAL INTERFACE
FIFO - First-in, first-out (FIFO) memory chips are used in buffering applications between devices that operate at different speeds, or in applications
where data must be stored temporarily for further processing.
- FIFO - 3V ASYNCHRONOUS
- FIFO - 5V ASYNCHRONOUS
- FIFO - 3V SYNCHRONOUS
- FIFO - 5V SYNCHRONOUS
- FIFO - 3V SYNCHRONOUS DUAL
- FIFO - 5V SYNCHRONOUS DUAL
- FIFO - 3V SYNCHRONOUS CHANNEL QUEUE
DUAL PORT -
- DUAL PORT - 3V ASYNCHRONOUS
- DUAL PORT - 5V ASYNCHRONOUS
ROM -
- ROM - 3V MASK
- ROM - 5V OTP
MICROCONTROLLERS -
- MICROCONTROLLER - 3V 8 BIT
- MICROCONTROLLER - 5V 8 BIT